Search results for " Time resolved measurements"
showing 4 items of 4 documents
Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser
2009
Abstract Photosensitivity of SiO 2 –Al and SiO 2 –Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO 2 –Al and transient, life time about one hour, visible darkening in the case of SiO 2 –Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case …
Luminescence properties of nonbridging oxygen hole centers at the silica surface
2009
Abstract Two variants of the surface-nonbridging oxygen hole center, ( Si–O)3Si–O• and ( Si–O)2(H–O)Si–O•, stabilized in porous films of silica nano-particles were investigated by time resolved luminescence excited in the visible and UV spectral range by a tunable laser system. Both defects emit a photoluminescence around 2.0 eV with an excitation spectrum evidencing two maxima at 2.0 and 4.8 eV, this emission decreases by a factor ∼2 on increasing the temperature from 8 up to 290 K. However, the different local structure influences the emission lineshape, the quantum yield and the decay lifetime. Such peculiarities are discussed on the basis of the symmetry properties of these defects.
Vibrational properties of the surface-nonbridging oxygen in silica nanoparticles
2008
By studying the site-selective luminescence spectra of oxidized silica nanoparticles we identify the electronic and the vibrational lines associated with the surface nonbridging oxygen, $\ensuremath{\equiv}{\text{Si-O}}^{\ifmmode\bullet\else\textbullet\fi{}}$. This defect emits a zero-phonon line inhomogeneously distributed around 2.0 eV with full width at half maximum of 0.04 eV, weakly coupled with the local ${\text{Si-O}}^{\ifmmode\bullet\else\textbullet\fi{}}$ stretching mode whose frequency is measured to be $920\text{ }{\text{cm}}^{\ensuremath{-}1}$. These findings are different from those of the well-characterized defect in the bulk silica thus evidencing structural peculiarities of …
Luminescence of the surface nonbridging oxygen hole center in silica: Spectral and decay properties
2008
We investigated the red luminescence in a porous film of silica nanoparticles, originating from surface nonbridging oxygen hole centers. The excitation spectrum was measured from 1.8 to 8.0 eV by a tunable laser system and a synchrotron radiation source; this spectrum evidences a peak at 2.0 eV, nearly overlapping with the emission, and an ultraviolet broadband with peaks at 4.8 and 6.0 eV. The emission is characterized by a spectrum with two subbands split by 0.07 eV, its decay occurs with lifetime longer than 30 microsec and undergoes a thermal quenching by a factor aboout 2 with increasing temperature from 10 to 290 K. The optical characteristics of surface and bulk centers are discussed…